This example of nanolithography was created on silicon using a pulsed 532 nm laser. It shows a representation of the Raman effect and the logos of both WITec and parent company Oxford Instruments.
The upper image depicts the integrated intensity of the Si band, while the lower image visualizes the Si peak position shift that occurs when vaporization leaves residual stresses in the adjacent material.
Scan range: 560x360 pixels; 140x90 µm². Excitation: @532 nm; 50 mW. Objective: 100x; NA 0.9
Learn more about our nanolithography capabilities in our Lithography Application Note.